Two-dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic gadgets on account of its quick service separation and transportation. Contemplating superior metallic traits accompanied with excessive electrical conductivity in NbSe2, floor oxidation supplies an environment friendly option to kind NbSe2/Nb2O5 metal-semiconductor heterostructure. Herein, a size-dependent NbSe2/Nb2O5 nanosheets was achieved by a liquid part exfoliation methodology and a gradient centrifugation technique. This NbSe2/Nb2O5 primarily based photodetector exhibits excessive responsivity with 23.21 μA/W, quick response time in millisecond magnitude, and vast band detection skill within the UV-Vis area. It’s noticeable that the photocurrent density is delicate to oxygen situations on account of oxygen-sensitized photoconduction mechanism. The versatile testing of the NbSe2/Nb2O5 primarily based PEC-type photodetector displays excessive photodetection efficiency even after bending and twisting. Past that, the solid-state PEC-type NbSe2/Nb2O5 photodetector additionally achieves comparatively steady photodetection and excessive stability. This work promotes the applying of 2D NbSe2/Nb2O5 metal-semiconductor heterostructure in versatile optoelectronic gadgets.
