Schottky junction is often used for fabricating heterojunction-based 2D transition steel dichalcogenide (TMD) photodetectors, characteristically providing a large detection vary, excessive sensitivity and quick response. Nevertheless, these units typically undergo from lowered detectivity because of the excessive darkish present, making it difficult to find a easy and environment friendly common means to enhance the photoelectric performances. Right here, we reveal a novel method for integrating ZnO nanowire gates into MoS2-Au Schottky junction to enhance the photoelectric performances of photodetector by domestically controlling the Schottky barrier. This technique remarkably reduces the darkish present degree of the system with out affecting its photocurrent and the Schottky detectivity might be modified to a most detectivity of 1.4×1013 Jones with -20 V NG bias. This work supplies potential prospects for tuning the band construction of different supplies and optimizing the efficiency of heterojunction photodetectors
