The mixing of ferroelectrics that exhibit excessive dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor trade will allow novel system varieties for widespread purposes, and but there are few silicon-compatible ferroelectrics appropriate for system downscaling. We reveal with first-principles calculations that the improved depolarization discipline on the nanoscale could be utilized to melt unswitchable wurtzite III-V semiconductors, leading to ultrathin two-dimensional (2D) sheets possessing reversible polarization states. A 2D sheet of AlSb consisting of three atomic planes is recognized to host each ferroelectricity and antiferroelectricity, and the tristate switching is accompanied by a metal-semiconductor transition. The thermodynamics stability and potential synthesizability of the triatomic layer are corroborated with phonon spectrum calculations, ab initio molecular dynamics, and variable-composition evolutionary construction search. We suggest a 2D AlSb-based homojunction discipline impact transistor that helps three distinct and nonvolatile resistance states. This new class of III-V semiconductor-derived 2D supplies with twin ferroelectricity and antiferroelectricity opens up the likelihood for nonvolatile multibit-based built-in nanoelectronics.
