InP quantum dots (QDs) are attracting vital curiosity as a probably much less poisonous various to Cd-based QDs in lots of analysis areas. Though InP-based core/shell QDs with wonderful photoluminescent properties have been reported to this point, refined interface remedy to remove defects is usually obligatory. Herein, utilizing aminophosphine as a seeding supply of phosphorus, we discover that H2S might be effectively generated from the response between thiol and alkylamine at excessive temperature. Other than common comprehending that H2S act as an S precursor, it’s revealed that with core etching by H2S, the interface between InP and ZnS might be reconstructed with S2- incorporation. Such a transition layer can cut back inherent defects on the interface, leading to vital photoluminescence (PL) enhancement. In the meantime, the dimensions of the InP core might be additional managed by H2S etching, which provides a possible course of to acquire huge band hole InP-based QDs with blue emission.
